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 74AUP2GU04
Low-power dual unbuffered inverter
Rev. 02 -- 3 July 2009 Product data sheet
1. General description
The 74AUP2GU04 provides two unbuffered inverting gates. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
2. Features
I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I ESD protection: N HBM JESD22-A114E Class 3A exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101C exceeds 1000 V I Low static power consumption; ICC = 0.9 A (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Multiple package options I Specified from -40 C to +85 C and -40 C to +125 C
3. Ordering information
Table 1. Ordering information Package Temperature range Name 74AUP2GU04GW 74AUP2GU04GM 74AUP2GU04GF -40 C to +125 C -40 C to +125 C -40 C to +125 C SC-88 XSON6 XSON6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 x 1.45 x 0.5 mm plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 x 1 x 0.5 mm
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
4. Marking
Table 2. Marking Marking code[1] aD aD aD Type number 74AUP2GU04GW 74AUP2GU04GM 74AUP2GU04GF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
1A
1Y
6
1
1
6
540
VCC
50
A
3 2A 2Y 4 3 1 4
Y
mnb106
mnb107
001aad073
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74AUP2GU04 74AUP2GU04
1A GND 1 2 6 5 1Y GND VCC 2A 2A 3
001aad699
1A
1
6
1Y 1A GND
74AUP2GU04
1 2 3 6 5 4 1Y VCC 2Y
2
5
VCC
3
4
2Y
2A
4
2Y
001aad700
001aad701
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT363 (SC-88)
Fig 5. Pin configuration SOT886 (XSON6)
Fig 6. Pin configuration SOT891 (XSON6)
74AUP2GU04_2
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Product data sheet
Rev. 02 -- 3 July 2009
2 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
6.2 Pin description
Table 3. Symbol 1A GND 2A 2Y VCC 1Y Pin description Pin 1 2 3 4 5 6 Description data input ground (0 V) data input data output supply voltage data output
7. Functional description
Table 4. Input nA L H
[1] H = HIGH voltage level; L = LOW voltage level.
Function table[1] Output nY H L
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot
[1] [2] [3]
Parameter supply voltage input clamping current input voltage output clamping current output voltage output current supply current ground current storage temperature total power dissipation
Conditions VI < 0 V
[1]
Min -0.5 -50 -0.5 -50
[2]
Max +4.6 +4.6 VCC + 0.5 20 50 +150 250
Unit V mA V mA V mA mA mA C mW
VO < 0 V VO = 0 V to VCC
-0.5 -50 -65
Tamb = -40 C to +125 C
[3]
-
The minimum input voltage ratings may be exceeded if the input current ratings are observed. The output voltage ratings may be exceeded if the output current ratings are observed. For SC-88 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
74AUP2GU04_2
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Product data sheet
Rev. 02 -- 3 July 2009
3 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
9. Recommended operating conditions
Table 6. Symbol VCC VI VO Tamb t/V Recommended operating conditions Parameter supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 0.8 V to 3.6 V Conditions Min 0.8 0 0 -40 0 Max 3.6 3.6 VCC +125 200 Unit V V V C ns/V
10. Static characteristics
Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VCC = 0.8 V to 3.6 V VCC = 0.8 V to 3.6 V VI = GND or VCC IO = -20 A; VCC = 0.8 V to 3.6 V IO = -1.1 mA; VCC = 1.1 V IO = -1.7 mA; VCC = 1.4 V IO = -1.9 mA; VCC = 1.65 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = GND or VCC IO = 20 A; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II ICC CI CO input leakage current supply current input capacitance output capacitance VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VCC = 0 V to 3.6 V; VI = GND or VCC VO = GND; VCC = 0 V 1.5 1.8 0.1 0.3 x VCC 0.31 0.31 0.31 0.44 0.31 0.44 0.1 0.5 V V V V V V V V A A pF pF VCC - 0.1 1.11 1.32 2.05 1.9 2.72 2.6 V V V V V V V V 0.75 x VCC 0.75 x VCC V 0.25 x VCC V Conditions Min Typ Max Unit
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
4 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
Table 7. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = -40 C to +85 C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VCC = 0.8 V to 3.6 V VCC = 0.8 V to 3.6 V VI = GND or VCC IO = -20 A; VCC = 0.8 V to 3.6 V IO = -1.1 mA; VCC = 1.1 V IO = -1.7 mA; VCC = 1.4 V IO = -1.9 mA; VCC = 1.65 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = GND or VCC IO = 20 A; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II ICC input leakage current supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VCC = 0.8 V to 3.6 V VCC = 0.8 V to 3.6 V VI = GND or VCC IO = -20 A; VCC = 0.8 V to 3.6 V IO = -1.1 mA; VCC = 1.1 V IO = -1.7 mA; VCC = 1.4 V IO = -1.9 mA; VCC = 1.65 V IO = -2.3 mA; VCC = 2.3 V IO = -3.1 mA; VCC = 2.3 V IO = -2.7 mA; VCC = 3.0 V IO = -4.0 mA; VCC = 3.0 V VCC - 0.11 0.6 x VCC 0.93 1.17 1.77 1.67 2.40 2.30 V V V V V V V V 0.1 0.3 x VCC 0.37 0.35 0.33 0.45 0.33 0.45 0.5 0.9 V V V V V V V V A A VCC - 0.1 0.7 x VCC 1.03 1.30 1.97 1.85 2.67 2.55 V V V V V V V V 0.75 x VCC V 0.25 x VCC V Conditions Min Typ Max Unit
Tamb = -40 C to +125 C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage 0.75 x VCC V 0.25 x VCC V
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
5 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
Table 7. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOL LOW-level output voltage Conditions VI = GND or VCC IO = 20 A; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II ICC input leakage current supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V 0.11 0.41 0.39 0.36 0.50 0.36 0.50 0.75 1.4 V V V V V V V A A 0.33 x VCC V Min Typ Max Unit
11. Dynamic characteristics
Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions Min CL = 5 pF tpd propagation delay nA to nY; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 10 pF tpd propagation delay nA to nY; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V
[2] [2]
25 C Typ[1] Max
-40 C to +125 C Min Max Max (85 C) (125 C)
Unit
0.9 0.7 0.5 0.4 0.3
6.2 2.3 1.7 1.4 1.1 1.0
4.4 3.1 2.6 2.0 1.8
0.9 0.6 0.5 0.4 0.3
4.8 3.4 2.9 2.3 2.1
5.3 3.8 3.2 2.6 2.4
ns ns ns ns ns ns
1.2 1.0 0.8 0.6 0.5
9.6 3.1 2.3 1.9 1.5 1.3
6.1 4.0 3.3 2.7 2.4
1.2 0.9 0.7 0.6 0.5
6.8 4.6 3.8 3.1 2.7
7.5 5.1 4.2 3.5 3.0
ns ns ns ns ns ns
74AUP2GU04_2
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Product data sheet
Rev. 02 -- 3 July 2009
6 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
Table 8. Dynamic characteristics ...continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions Min CL = 15 pF tpd propagation delay nA to nY; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 30 pF tpd propagation delay nA to nY; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V
[1] [2] [3] [4] All typical values are measured at nominal VCC. tpd is the same as tPLH and tPHL. All specified values are the average typical values over all stated loads. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi x N + (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL x VCC2 x fo) = sum of the outputs.
[3][4] [2] [2]
25 C Typ[1] Max
-40 C to +125 C Min Max Max (85 C) (125 C)
Unit
1.6 1.3 1.0 0.8 0.7
13.0 3.8 2.8 2.3 1.9 1.6
7.9 4.9 4.0 3.2 2.9
1.4 1.1 0.9 0.8 0.7
8.8 5.7 4.7 3.7 3.3
9.7 6.3 5.2 4.1 3.7
ns ns ns ns ns ns
2.4 2.0 1.7 1.4 1.2
23.2 6.0 4.2 3.6 2.9 2.5
13.1 7.6 6.1 4.8 4.3
2.2 1.8 1.5 1.3 1.1
14.8 9.0 7.2 5.7 5.1
16.3 9.9 8.0 6.3 5.7
ns ns ns ns ns ns
-
1.1 1.1 1.3 1.5 3.0 4.5
-
-
-
-
pF pF pF pF pF pF
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
7 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
12. Waveforms
VI nA input GND t PHL VOH nY output VOL VM VM
mna344
VM
VM
t PLH
Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage drops that occur with the output load.
Fig 7. The data input (nA) to output (nY) propagation delays Table 9. VCC 0.8 V to 3.6 V Measurement points Output VM 0.5 x VCC Input VM 0.5 x VCC VI VCC tr = tf 3.0 ns
Supply voltage
VCC
VEXT
5 k
G
VI
VO
DUT
RT CL RL
001aac521
Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times.
Fig 8. Load circuitry for switching times Table 10. VCC 0.8 V to 3.6 V
[1]
Test data Load CL RL
[1]
Supply voltage
VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 x VCC
5 pF, 10 pF, 15 pF and 30 pF 5 k or 1 M
For measuring enable and disable times RL = 5 k, for measuring propagation delays, set-up and hold times and pulse width RL = 1 M.
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
8 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
13. Additional characteristics
Rbias = 560 k
VCC
0.47 F
input
output
100 F
VI (f = 1 kHz)
A IO GND
mna050
I O g fs = --------V I
VO is constant.
Fig 9. Test set-up for measuring forward transconductance
30 gfs (mA/V) 20
001aad074
10
0 0 1 2 3 VCC (V) 4
Tamb = 25 C.
Fig 10. Typical forward transconductance as a function of supply voltage
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
9 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
14. Application information
Some applications for the 74AUP2GU04 are:
* Linear amplifier (see Figure 11) * Crystal oscillator (see Figure 12)
Remark: All values given are typical values unless otherwise specified.
R2
VCC
1 F R1
U04
ZL
mna052
ZL > 10 k. R1 3 k. R2 1 M. Open loop amplification: AOL = 20. Voltage amplification: A V = - ----------------------------------------- .
A OL R1 1 + ------ ( 1 + A OL ) R2
Vo(p-p) = VCC - 1.5 V centered at 0.5 x VCC. Unity gain bandwidth product is 5 MHz.
Fig 11. Linear amplifier application
R1
R2
U04
C1 C2
out
mna053
C1 = 47 pF. C2 = 22 pF. R1 = 1 M to 10 M. R2 optimum value depends on the frequency and required stability against changes in VCC or average minimum ICC (ICC = 2 mA at VCC = 3.3 V and f = 10 MHz).
Fig 12. Crystal oscillator application
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
10 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
15. Package outline
Plastic surface-mounted package; 6 leads SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 06-03-16
Fig 13. Package outline SOT363 (SC-88)
74AUP2GU04_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
11 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b 1 2 3 4x L1 L
(2)
e
6 e1
5 e1
4
6x
(2)
A
A1 D
E
terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm
Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22
Fig 14. Package outline SOT886 (XSON6)
74AUP2GU04_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
12 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
SOT891
1
2
b 3 4x
(1)
L1 e
L
6 e1
5 e1
4
6x
(1)
A
A1 D
E
terminal 1 index area 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 2 mm
Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15
Fig 15. Package outline SOT891 (XSON6)
74AUP2GU04_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
13 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
16. Abbreviations
Table 11. Acronym CDM DUT ESD HBM MM Abbreviations Description Charged Device Model Device Under Test ElectroStatic Discharge Human Body Model Machine Model
17. Revision history
Table 12. Revision history Release date 20090703 Data sheet status Product data sheet Change notice Supersedes 74AUP2GU04_1 Document ID 74AUP2GU04_2 Modifications:
* * *
Section 8 "Limiting values": Changed: Derating factor XSON6 packages. Section 10 "Static characteristics": Changed: conditions for HIGH-level output voltage and LOW-level output voltage. Section 11 "Dynamic characteristics": Changed: typical power dissipation capacitance. Product data sheet -
74AUP2GU04_1
20061215
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
14 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
18. Legal information
18.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
18.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
74AUP2GU04_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 3 July 2009
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NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
20. Contents
1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Additional characteristics . . . . . . . . . . . . . . . . . 9 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 July 2009 Document identifier: 74AUP2GU04_2


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